MJE700
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Complementary power darlington transistors. The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for a
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MJE700 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
MJE700
DESCRIPTION ·DC Current Gain—
: hFE = 2000(TYP) @ IC= -2A ·Minimum Lot-to-.
MJE700 - 4.0 AMPERE DARLINGTON POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE700/D
PNP
Plastic Darlington Complementary Silicon Power Transistors
. . . designe.
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..
MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors
These devi.
MJE700 - PNP Epitaxial Silicon Darlington Transistor
(Fairchild)
MJE700/701/702/703
MJE700/701/702/703
Monolithic Construction With Built-in BaseEmitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5.
MJE700G - Plastic Darlington Complementary Silicon Power Transistors
(ON Semiconductor)
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
Plastic Darlington Complementary Silicon Power Transistors
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MJE700T - 4.0 AMPERE DARLINGTON POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE700/D
PNP
Plastic Darlington Complementary Silicon Power Transistors
. . . designe.
MJE700T - POWER TRANSISTOR
(Central Semiconductor)
MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CE.
MJE700T - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = -60 V ·DC Current Gain—
: hFE = 750(Min) @.
MJE701 - PNP Epitaxial Silicon Darlington Transistor
(Fairchild)
MJE700/701/702/703
MJE700/701/702/703
Monolithic Construction With Built-in BaseEmitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5.
MJE701 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = -60 V ·DC Current Gain—
: hFE = 750(Min) @.